Related papers: EUV induced defects on few-layer graphene
An extreme ultraviolet (EUV) single attosecond pulse passing through a laser-dressed dense gas is studied theoretically. The weak EUV pulse pumps the helium gas from the ground state to the 2s2p(1P) autoionizing state, which is coupled to…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at…
Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553…
We discuss a concept of a point-like source of the extreme ultraviolet (EUV) light based on a non-equilibrium microwave discharge in expanding jet of dense xenon plasma with multiply charged ions. A conversion efficiency of microwave…
Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To…
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…
Recent observations with the Extreme Ultraviolet Explorer (EUVE) suggest that at least some clusters of galaxies are luminous sources of extreme ultraviolet (EUV) radiation. It is not clear yet whether EUV emission is a general feature of…
We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its…
Richness and complexity of Raman spectra related to graphene materials is established from years to decades, with, among others: the well-known G, D, 2D,... bands plus a plethora of weaker bands related to disorder behavior, doping, stress,…
The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high…
Graphene has been recognized as an attractive two-dimensional material for fundamental research and wide applications in electronic and photonic devices owing to its unique properties. The technologies to modulate the properties of graphene…
Nd doped phosphate glasses have been studied before and after gamma irradiation in order to understand the effect of glass composition and radiation induced defects on the optical properties of glasses. UV, Vis absorption and…
The extreme ultraviolet (XUV) emission from dense plasmas generated with sub-10-fs laser pulses with varying peak intensities up to 3*10^16 W/cm^2 is investigated for different target materials. K shell spectra are obtained from low Z…
The Raman shift, broadening, and relative Raman intensities of bilayer graphene are computed as functions of the electron concentration. We include dynamic effects for the phonon frequencies and we consider the gap induced in the band…
Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results…
Assuming a spherical symmetry, the extreme UV emitted by a very hot source ionizes low pressure molecular hydrogen making a transparent bubble of H II (Protons and electrons). For an increase of radius, intensity of extreme UV and…
We explore the effects of UV absorbing material on the shape of the EUV continuum radiation emitted by the active galactic nucleus, and on the relative strengths of emission lines, formed in the narrow line regions of Seyfert galaxies,…
Extreme ultraviolet (XUV) light sources allow for the probing of bound electron dynamics on attosecond scales, interrogation of high-energy-density matter, and access to novel regimes of strong-field quantum electrodynamics. Despite the…
In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is…