Related papers: Charge Relaxation in a Single Electron Si/SiGe Dou…
Electron relaxation in quantum dots is studied theoretically in polar semiconductor materials, with an emphasis put on the phonon-bottleneck problem and electron-LO-phonon coupling. The theory is based on multiphonon states of the…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
We investigate theoretically the electron spin relaxation in single-electron nanowire-based semiconductor double quantum dots induced by confined phonons and find that the electron spin relaxation rate can be efficiently manipulated by…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to…
We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
Spin relaxation from a triplet excited state to a singlet ground state in a semiconductor quantum dot is studied by employing an electrical pump-and-probe method. Spin relaxation occurs via cotunneling when the tunneling rate is relatively…
We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin…
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in…
We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…
We measured the relaxation and decoherence rates of a superconducting transmon qubit in a resonator-free setting. In our experiments, the qubit is coupled to an open coplanar waveguide such that the transmission of microwaves through this…
The spin-lattice relaxation time, $T_{1}$, of conduction electrons is measured as a function of temperature and magnetic field in MgB$_2$. The method is based on the detection of the $z$ component of the conduction electron magnetization…
We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be…
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal…