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Related papers: Two-dimensional bipolar junction transistors

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While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…

Mesoscale and Nanoscale Physics · Physics 2018-10-10 Lauryn Wu , Kunming Gu , Qiliang Li

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of…

Mesoscale and Nanoscale Physics · Physics 2020-07-08 Tomáš Rauch , Miguel A. L. Marques , Silvana Botti

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different…

The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…

Mesoscale and Nanoscale Physics · Physics 2021-10-12 Sikandar Aftab , Ms. Samiya , Muhammad Waqas Iqbal , Fahmid Kabir , Muhammad Zahir Iqbal , M. Arslan Shehzad

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…

In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…

Mesoscale and Nanoscale Physics · Physics 2021-10-26 Md Nazmul Hasan , Chenxi Li , Junyu Lai , Jung-Hun Seo

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely…

Mesoscale and Nanoscale Physics · Physics 2015-11-10 Daowei He , Yiming Pan , Haiyan Nan , Shuai Gu , Ziyi Yang , Bing Wu , Xiaoguang Luo , Bingchen Xu , Yuhan Zhang , Yun Li , Zhenhua Ni , Baigeng Wang , Jia Zhu , Yang Chai , Yi Shi , Xinran Wang

One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In…

Mesoscale and Nanoscale Physics · Physics 2014-03-28 Britton W. H. Baugher , Hugh O. H. Churchill , Yafang Yang , Pablo Jarillo-Herrero

In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…

Materials Science · Physics 2010-01-04 Behnaz Gharekhanlou , Sina Khorasani

Basic SiC bipolar transistors have been studied in the past for their applications where high power or high temperature operation is required. However since the current gain in SiC bipolar transistors is very low and therefore, a large base…

Materials Science · Physics 2010-08-19 M. Jagadesh Kumar , Amit Sharma

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

Mesoscale and Nanoscale Physics · Physics 2024-12-31 Giuseppe Lovarelli , Fabrizio Mazziotti , Demetrio Logoteta , Giuseppe Iannaccone

Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal-superconductor (SNS) current-voltage characteristics. The SIS…

Superconductivity · Physics 2009-11-07 Y. Zhang , D. Kinion , J. Chen , D. G. Hinks , G. W. Crabtree , John Clarke

As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling…

Materials Science · Physics 2024-06-12 Lishu Zhang , Jun Zhou , Hui Li , Lei Shen , Yuan Ping Feng

The biphenylene network (BPN) is a notable achievement in recent fabrication endeavors for conceiving new 2D materials. The stability of its boron nitride counterpart, BN-BPN, has been confirmed through numerical investigations. In this…

Materials Science · Physics 2023-10-12 Kleuton Antunes Lopes Lima , Luiz Antonio Ribeiro Junior

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

Mesoscale and Nanoscale Physics · Physics 2024-12-17 Keshari Nandan , Ateeb Naseer , Amit Agarwal , Somnath Bhowmick , Yogesh S. Chauhan

Biological systems rely on ions and molecules as information carriers rather than electrons, motivating the development of devices that interface with biochemical systems for sensing, information processing, and actuation via spatiotemporal…

Soft Condensed Matter · Physics 2025-07-22 Soichiro Tottori , Rohit Karnik

Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications…

Mesoscale and Nanoscale Physics · Physics 2018-09-21 Sunny Gupta , Sharmila N. Shirodkar , Alex Kutana , Boris I. Yakobson

Thin transition metal dichalcogenides sustain superconductivity at large in-plane magnetic fields due to Ising spin-orbit protection, which locks their spins in an out-of-plane orientation. Here we use thin NbSe$_2$ as superconducting…