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A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
We report on hydrazine-sensing organic electrochemical transistors (OECTs) with a design consisting in concentric annular electrodes. The design engineering of these OECTs was motivated by the great potential of using OECT sensing arrays in…
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…
With the advent of smartphones, there has been a recent increase in the use of capacitive touch sensing for various Human Machine Interfaces (HMI). Capacitive-based touch sensing provides higher flexibility and cost-effectiveness than,…
Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…
A novel room temperature capacitance-to-phase transducer is described, which uses a modified All-Pass filter architecture combined with a simple series resonant tank circuit with a moderate Q-factor. It is fashioned from a discrete inductor…
We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the…
The need for ever-faster information processing requires extremely small devices operating at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that…
Integrated optical electric field sensors (IOES) play a crucial role in electric field measurement. This paper introduces the principles of the IOES and quantitatively evaluates the impact of humidity on measurement accuracy. Sensors with…
Numerical simulations are a powerful tool for the development and improvement of Li-ion batteries. Modeling the mass transport of the involved electrolytic solutions requires precise determination of the corresponding electrolyte…
In this paper, the design and the characterization of a novel interrogator based on integrated Fourier transform (FT) spectroscopy is presented. To the best of our knowledge, this is the first integrated FT spectrometer used for the…
Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations, such as…
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…
The concept of the electron localization function (ELF) is extended to two-dimensional (2D) electron systems. We show that the topological properties of the ELF in 2D are considerably simpler than in molecules studied previously. We compute…
Organic light emitting field effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light emitting diodes. However, these…
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…
We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…
A crucial limit to measurement efficiencies of superconducting circuits comes from losses involved when coupling to an external quantum amplifier. Here, we realize a device circumventing this problem by directly embedding a two-level…