Related papers: Field - Effect Switching in Nano-Graphite Films
Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…
Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
We present an experimental and theoretical study of the low-field dynamics of current-driven vortex oscillations in nanocontacts based on spin-valve multilayers. These oscillations appear as low-frequency (250-500 MHz) excitations in the…
We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their…
Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm…
We study current-driven magnetization switching in nanofabricated Ni84Fe16/Cu/Ni84Fe16 trilayers at 295 K and 4.2 K. The shape of the hysteretic switching diagram at low magnetic field changes from 295 K to 4.2 K. The reversible behavior at…
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon…
We report on measurements of the superconducting properties of FeSe05Te05 thin films grown on lanthanum aluminate. The films have high transition temperatures (above 19 K) and sharp resistive transitions in fields up to 15 T. The…
The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of…
The rate of energy transfer from ion projectiles onto the electrons of a solid target is hard to determine experimentally in the velocity regime between the adiabatic limit and the Bragg peak. First-principles simulations have lately…
We present a quantitative analysis of the steady state electronic transport in a resistive switching device. The device is composed of a thin film of Ag$_{2}$S (solid electrolyte) contacted by a Pt nano-contact acting as ion-blocking…
Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below $T_{c}$ (= 2.48 K) is due to Bi nanoparticles. The Curie-like…
A magnetic-field-driven transition from metallic- to semiconducting-type behavior in the basal-plane resistance takes place in highly oriented pyrolytic graphite at a field $H_c \sim 1~$kOe applied along the hexagonal c-axis. The analysis…
Carbon nanoconductors are known to have extraordinary mechanical strength and interesting magnetic properties. Moreover, nanoconductors based on one- or two-dimensional carbon allotropes display a very high current-carrying capacity and…