Related papers: Electrically tunable three-dimensional g-factor an…
We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…
We present detailed measurements of the discrete electron-tunneling level spectrum within nanometer-scale cobalt particles as a function of magnetic field and gate voltage, in this way probing individual quantum many-body eigenstates inside…
The quantum modes of a nonlinear Klein-Gordon lattice have been computed numerically [L. Proville, Phys. Rev. B 71, 104306 (2005)]. The on-site nonlinearity has been found to lead to phonon bound states. In the present paper, we compute…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We present analytical and numerical investigation of spectral and transport properties of a quadruple quantum-dot (QQD) structure which is one of the popular low-dimensional systems in the context of fundamental quantum physics study,…
The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A…
We investigate the effective Lande factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the $\mathbf{k}\cdot\mathbf{p}$ theory and the envelope function approach we derive a conduction band Hamiltonian where the…
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
The electron g-factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an…
The intrinsic geometric degree of freedom that was proposed to determine the optimal correlation energy of the fractional quantum Hall states, is analyzed for quantum confined planar electron systems. One major advantage in this case is…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
The site-dependent g factor of a single magnetic molecule, with intramolecular resolution, is demonstrated for the first time by low-temperature, high-magnetic-field scanning tunneling microscopy of dehydrogenated Mn-phthalocyanine…
We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine…
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a…
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the…
The finite nuclear-size effect on the leading bound-electron g factor and the one-loop QED corrections to the bound-electron g factor is investigated for the ground state of hydrogen-like ions. The calculation is performed to all orders in…
We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin…
We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor \nu=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping…
We address the problem of electronic and nuclear spin resonance of an individual atom on a surface driven by a scanning tunnelling microscope. Several mechanisms have been proposed so far, some of them based on the modulation of exchange…