Related papers: Half Metallic Bilayer Graphene
The ground state of bilayer graphene is investigated by the density functional calculations with local spin density approximation. We find a ground state with layer antiferromagnetic ordering, which has been suggested by former studies…
Chirally stacked N-layer graphene with N>=2 is susceptible to a variety of distinct broken symmetry states in which each spin-valley flavor spontaneously transfers charge between layers. In mean-field theory the neutral bilayer ground state…
We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a…
We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi…
It is known that electron interactions can cause a perfect spin polarization of the Fermi surface of a metal. In such a situation only half of the non-interacting Fermi surface is available, and thus this phase is commonly referred to as a…
Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…
Broken symmetry states in bilayer graphene in perpendicular electric $E_\perp$ and in-plane magnetic $B_\parallel$ fields are studied in the presence of the dynamically screened long-range Coulomb interaction and the symmetry-breaking…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
Motivated by the recent experiment of Velasco Jr. {\em et al.} [J. Velasco Jr. {\em et al.}, Nat. Nanotechnology 7, {\bf 156} (2012)], we develop a mean-field theory of the interaction-induced antiferromagnetic (AF) state in bilayer…
Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…
We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the…
We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a…
We investigate theoretically the electronic structure of graphene and boron nitride (BN) lateral heterostructures, which were fabricated in recent experiments. The first-principles density functional calculation demonstrates that a huge…
Rhombohedral stacked multilayer graphene displays the occurrence of a magnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC…
Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…
We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…
We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $\nu=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $\nu=0$ when the…
Electrical current can be completely spin polarized in a class of materials known as half-metals, as a result of the coexistence of metallic nature for electrons with one spin orientation and insulating for electrons with the other. Such…
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…
We predict that neutral graphene bilayers are pseudospin magnets in which the charge density-contribution from each valley and spin spontaneously shifts to one of the two layers. The band structure of this system is characterized by a…