Rhombohedral stacked multilayer graphene displays the occurrence of a magnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC graphene. Here, by using first-principles calculations, we show that field-effect doping of these graphene multilayers induces a perfect half-metallic behaviour with 100% of spin current polarization already at dopings attainable in conventional field effect transistors with solid state dielectrics. Our work demonstrates the realisability of a new kind of spintronic devices where the transition between the low resistance and the high resistance state is driven only by electric fields.
@article{arxiv.1802.09028,
title = {Field-effect-driven half-metallic multilayer graphene},
author = {Jacopo Baima and Francesco Mauri and Matteo Calandra},
journal= {arXiv preprint arXiv:1802.09028},
year = {2018}
}