Related papers: Graphene transistors for bioelectronics
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical…
We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The…
Graphene field effect transistors (G-FETs) have appeared as suitable candidates for sensing charges and have thus attracted large interest for ion and chemical detections. In particular, their high sensitivity, chemical robustness,…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…
The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
Graphene Field-Effect Transistors (GFETs) are increasingly employed as biochemical sensors due to their exceptional electronic properties, surface sensitivity, and potential for miniaturization. A critical challenge in deploying GFETs is…