Related papers: Advances in the theory of III-V Nanowire Growth Dy…
The kinetics of main physical processes controlling the growth of nanowires (NW) via evolution pass " vapor-liquid-solid" is considered. The roles of the thermodynamics and kinetics of cluster nucleation in the initial stage of NW formation…
Control of the crystallization process is central to developing novel materials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are…
Semiconductor nanowires are promising material systems for coming of age nanotechnology. The usage of the vapor solid solid (VSS) route, where the catalyst used for promoting axial growth of nanowire is a solid, offers certain advantages…
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG…
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are…
Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies…
The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise…
Large-scale CuO nanowires are commonly synthesized by the thermal oxidation method. However, the growth mechanism remains controversial between diffusion growth mechanism and vapor-solid (VS) growth mechanism. In this study, we investigated…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups.…
Nanorods grow in two modes through physical vapor deposition (PVD). In mode I, monolayer surface steps dictate the diameter of nanorods. In mode II, multiple-layer surface steps dictate the diameter, which is the smallest possible under…
Laser-assisted chemical vapour deposition (CVD) growth is an attractive mask-less process for growing locally aligned carbon nanotubes (CNTs) in selected places on temperature sensitive substrates. The nature of the localized process…
We describe a comprehensive model for the formation and morphological development of atmospheric ice crystals growing from water vapor, also known as snow crystals. Our model derives in part from empirical measurements of the intrinsic ice…
We present a multi-phase-field model to describe quantitatively nanowire growth by the vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three non-conserved order parameters that distinguish the vapor,…
I examine the molecular dynamics of ice growth from water vapor, focusing on how the attachment kinetics can be augmented by edge-dependent surface diffusion. Although there are significant uncertainties in developing an accurate physical…
Vapor-liquid-solid (VLS) route and its variants are routinely used for scalable synthesis of semiconducting nanowires yet the fundamental growth processes remain unknown. Here, we employ atomic-scale computations based on model potentials…
We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy…
Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently…
The vapor-liquid-solid (VLS) method is considered a plausible technique for synthesizing germanium (Ge) nanostructures (e.g. nanowires), which have a broad range of applications due to their unique electronic properties and intrinsic…