Related papers: Advances in the theory of III-V Nanowire Growth Dy…
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…
The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during…
This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns,…
We explore the crystallization in a colloidal monolayer on a structured template starting from a few-particle nucleus. The competition between the substrate structure and that of the growing crystal induces a new crystal growth scenario.…
Vapor liquid solid (VLS) growth is one of the most widely used routes for nanowire synthesis. For conventional semiconductor nanowires, here we refer to group IV and III-V systems, decades of work have established VLS growth across diverse…
We present a first implementation of the Dendritic Needle Network (DNN) model for dendritic crystal growth in three dimensions including convective transport in the melt. The numerical solving of the Navier-Stokes equations is performed…
Classical theories of crystal nucleation and growth from the liquid assume activated processes that are interface limited, with the atoms individually joining the growing interface by jumps that occur at a rate that is determined by the…
Transition metal dichalcogenides exhibit a wide range of semiconducting, metallic, correlated, and topological electronic states that arise from strong coupling between lattice structure, dimensionality, and electronic degrees of freedom.…
A mathematical model to describe the growth of an arbitrarily large number of nanocrystals from solution is presented. First, the model for a single particle is developed. By non-dimensionalising the system we are able to determine the…
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were…
Growth evolution of InN nanostructures via a chemical vapor deposition technique is reported using In_2O_3 as precursor material and NH_3 as reactive gas in the temperature range of 550-700 ^oC. Morphology of the nanostructures solely…
We present a dynamical model of crystal growth, in which it is possible to reliably achieve asymmetric products, beginning from symmetric initial conditions and growing within an isotropic environment. The asymmetric growth is the result of…
We investigate the mechanism of growth of nanocrystals from solution using the case of ZnO. Spanning a wide range of values of the parameters, such as the temperature and the reactant concentration, that control the growth, our results…
Via molecular dynamics simulations we have studied kinetics of vapor-"solid" phase transition in an active matter model in which self-propulsion is introduced via the well-known Vicsek rule. The overall density of the particles is chosen in…
Snowflake growth provides us with a fascinating example of spontaneous pattern formation in nature. Attempts to understand this phenomenon have led to important insights in non-equilibrium dynamics observed in various active scientific…
In this work, we study the crystalline nuclei growth in glassy systems focusing primarily on the early stages of the process, at which the size of a growing nucleus is still comparable with the critical size. On the basis of molecular…
Thin film deposition technologies boost the development of modern semiconductor industries. Being a fancy variant, vapor phase deposition on metal nanoparticles (often in liquid phase) rather than on bare substrates opens novel avenues of…
We describe the electrically enhanced growth of needle crystals from the vapor phase, for which there exists a morphological instability above a threshold applied potential. Our improved theoretical treatment of this phenomenon shows that…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
We examine ice crystal growth from water vapor at temperatures near the melting point, when surface premelting creates a quasiliquid layer at the solid/vapor interface. Recent ice growth measurements as a function of vapor supersaturation…