Related papers: Tunneling through Al/AlOx/Al junction: analytical …
We present model calculations for the Landauer conductance of tunnel junctions. The tunneling of free electrons through a rectangular potential barrier is considered. The conductance of a finite number of barriers was calculated using a…
We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs}…
We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic…
We present results of electronic structure and transport calculations for metallic interfaces, based on density functional theory and the non-equilibrium Green's functions method. Starting from the electronic structure of smooth Al, Cu, Ag,…
We study the low-energy electronic properties of a junction made of two crossed metallic carbon nanotubes of general chiralities. We derive a tight binding tunneling matrix element that couples low-energy states on the two tubes, which…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
Using the atomic force microscope based break junction approach, applicable to metal point contacts and single molecule junctions, measurements can be repeated thousands of times resulting in rich data sets characterizing the properties of…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…
We propose a phenomenological description of electronic transport through a normal metal/superconductor interface of arbitrary transparency, which accounts for the presence of electron-electron interaction in the normal metal. The effect of…
Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention.…
Decoherence remains a critical obstacle to achieving high-fidelity, scalable superconducting qubits, with the tunnel barrier of Josephson junctions a key source of loss. Here we apply resonant X-ray reflectivity to non-destructively probe…
The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…
A detailed computational analysis has been performed, considering copper atomic contacts that are exposed directly to water molecules, hydroxyl groups, and monatomic as well as molecular hydrogen and oxygen species. The optimized physical…
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low…
The explicit expressions for a nonresonant tunneling current mediated by the bridging units of the molecular wire embedded between the metallic electrodes, are derived. The specific regimes of the charge transmission controlled by…
Hydrogen contamination in Josephson junctions is a potential source of device-to-device variability and two-level-system loss in superconducting qubits. In this work, we investigate hydrogen incorporation in oxidized aluminum barriers by…