Related papers: Variable resistor made by repeated steps of epitax…
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All…
The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in…
Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}\Omega \text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface…
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and…
This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO$_3$. It presents current efforts in the synthesis science of…
We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element.…
By using electrochemical etching, we fabricated conductive ultrathin SrVO3 (SVO) films that exhibited metallic behavior down to 3 monolayers (ML). From an observed systematic change in transport properties with decreasing film thickness, it…
We study the elastic response of rigid, wire frame particles in concentrated, glassy suspensions to a step strain by applying the simple, geometric methods developed in part I. The wire frame particles are comprised of thin, rigid rods of…
Complex oxide thin films and heterostructures exhibit a profusion of exotic phenomena, often resulting from the intricate interplay between film and substrate. Recently it has become possible to isolate epitaxially grown single-crystalline…
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate.…
The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively…
The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
The interface of complex oxide heterostructures sets the stage for various electronic and magnetic phenomena. Many of these collective effects originate from the precise structural arrangement at the interface that in turn governs local…
A new-type structural transition has been found in Li2RuO3 with honeycomb lattice of edge-sharing RuO6-octahedra. With decreasing temperature T, the electrical resistivity exhibits an anomalous increase at T=Tc~540 K, suggesting the (metal…
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and…
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in…