Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface

Olivier Fruchart; Anthony Rousseau; Didier Schmaus; A. L'Hoir; Richard Haettel; L. Ortega

doi:10.1063/1.3567793

Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface

Materials Science 2011-04-01 v1

Authors: Olivier Fruchart , Anthony Rousseau , Didier Schmaus , A. L'Hoir , Richard Haettel , L. Ortega

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Abstract

We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain.

Keywords

epitaxial buffer layer refractory metals chemical gradient lattice parameter sapphire combinatorial investigation strain

Cite

@article{arxiv.1101.4800,
  title  = {Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface},
  author = {Olivier Fruchart and Anthony Rousseau and Didier Schmaus and A. L'Hoir and Richard Haettel and L. Ortega},
  journal= {arXiv preprint arXiv:1101.4800},
  year   = {2011}
}

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