Related papers: The VOI-Based Valleytronics
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
The aim of presented research is to design a nanodevice, based on a MoS$_2$ monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate induced quantum dot within the monolayer, and to…
Using the B\"{u}ttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that…
We present electronic structure and quantum transport calculations that predict conducting channels induced in graphene quantum dots by lines of adsorbed hydrogen atoms to function as highly efficient, experimentally realizable valley…
As a derivative of graphene, graphene oxide (GO) was initially developed by chemists to emulate some of the key properties of graphene, but it was soon recognized as a unique material in its own right, addressing an application space that…
Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation…
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO…
We study the electron scattering produced by local out-of-plane strain deformations in the form of Gaussian bumps in graphene. Of special interest is to take into account the scalar field associated with the redistribution of charge due to…
Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
In this article, we analyze the quantum and topological properties of graphene-based plasmonic systems. We consider the following plasmonic materials: single-layer graphene, twisted bilayer graphene, and other graphene stackings, as well as…
Field emission from metals underpinned early vacuum-tube technology, and recent nanoscale engineering made field-emission devices compatible with modern silicon platforms. However, the limited tunability of electron transport in metals has…
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…
We consider a quantum network of mid-infrared, graphene plasmons coupled to the hydrogen-like excited states of group-V donors in silicon. First, we show how to use plasmon-enhanced light-matter interactions to achieve single-shot spin…
Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in…
The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…
Here we report on technology developments implemented into the Graphene Flagship European project for the integration of graphene and graphene-related materials (GRMs) into energy application devices. Many of the technologies investigated…
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…
A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance…
The influence of a topological defect in graphene on the ground state of electronic quasiparticle excitations is studied in the framework of the long-wavelength continuum model originating in the tight-binding approximation for the nearest…