Related papers: The VOI-Based Valleytronics
We analyze the bound-state spectra of mass-profile quantum dots in graphene, a system at current experimental reach. Homogeneous perpendicular magnetic fields are also considered which result in breaking the valley degeneracy. The spectra…
Topological boundary modes utilizing valley mode waveguides have opened opportunities in, for instance, the design of high transmission waveguides with tolerance to geometrical defects and sharp bends. Applications of these waveguides…
The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to…
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…
We develop a novel theoretical framework describing polariton-enhanced spin-orbit interaction of light on the surface of two-dimensional media. Starting from the integral formulation of electromagnetic scattering, we exploit the reduced…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up…
Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most…
The effect of electronic interactions in graphene with vacancies or resonant scatterers is investigated. We apply dynamical mean-field theory in combination with quantum Monte Carlo simulations, which allow us to treat non-perturbatively…
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we…
Dirac and Weyl materials refer to a class of solid materials which host low-energy quasiparticle excitations that can be described by the Dirac and Weyl equations in relativistic quantum mechanics. Starting with the advent of graphene as…
The rich and electrostatically tunable phase diagram exhibited by moir\'e materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on…
Valley degrees of freedom, providing a novel way to increase capacity and efficiency of information processing, have become an important instrument for photonics. Experimental studies on photonic topological valley kink states at interfaces…
Graphene as a two-dimensional (2D) topological Dirac semimetal has attracted much attention for its outstanding properties and potential applications. However, three-dimensional (3D) topological semimetals for carbon materials are still…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…