Related papers: The VOI-Based Valleytronics
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic…
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in…
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…
The conduction properties of a grain boundary junction with Fermi velocity mismatch are analyzed. We provide a generalization of the Dirac Hamiltonian model taking into account the Fermi velocity gradient at the interface. General boundary…
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…
The extreme mechanical resilience of graphene and the peculiar coupling it hosts between lattice and electronic degrees of freedom have spawned a strong impetus towards strain-engineered graphene where, on the one hand, strain augments the…
Valley filters are crucial to any device exploiting the valley degree of freedom. By using an atomistic model, we analyze the mechanism leading to the valley filtering produced by a line-defect in graphene and show how it can be inverted by…
Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…
The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum…
We theoretically study valley-filtering in pristine graphene irradiated by bicircular counter-rotating laser drive. The dynamical symmetry of the graphene and laser drive disrupts graphene's inversion symmetry, which results distinct…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient…
Graphene, and other members of the monolayer Xene family, represent an ideal materials platform for "valleytronics", the control of valley localized charge excitations. The absence of a gap in these semi-metals, however, precludes valley…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index…
We show how the trigonal warping effect in doped graphene can be used to produce fully valley polarized currents. We propose a device that acts both as a beam splitter and a collimator of these electronic currents. The result is…
The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by…
Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose an approach for operating valley filtering based on the…