Related papers: Nanomagnetic Logic and Magnetization Switching Dyn…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
The magnetization process of the $S=1/2$ anisotropic spin ladder with the ferromagnetic rung interaction is investigated using the numerical diagonalization of finite-size clusters. It is found that the translational symmetry broken…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
We study the coupled current and magnetization noise in magnetic nanostructures by magnetoelectronic circuit theory. Spin current fluctuations, which depend on the magnetic configuration, are found to be an important source of magnetization…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
We present a computationally efficient strategy that allows to simulate magnetization switching driven by spin-transfer torque in magnetic tunnel junctions within a micromagnetic model coupled with a matrix-based non-equilibrium Green's…
Magnetization measurements of Mn12 molecular nanomagnets with spin ground states of S = 10 and S = 19/2 showresonance tunneling at avoided energy level crossings. The observed oscillations of the tunnel probability as a function of the…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has…
It has been recently shown that multiferroic logic - where logic bits are encoded in the magnetization orientation of a nanoscale magnetostrictive layer elastically coupled to a piezoelectric layer - can be Bennett clocked with small…
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime…
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…
The presence of free spins in granular Al films is directly demonstrated by $\mu$SR measurements. A Mott transition is observed by probing the increase of the spin-flip scattering rate of conduction electrons as the nano-size metallic…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…
We theoretically demonstrate microwave-induced dynamical switching of magnetic topology in centrosymmetric itinerant magnets by taking the Kondo-lattice model on a triangular lattice, which is known to exhibit two types of skyrmion lattices…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
Energy-efficient switching of nanoscale magnets requires the application of a time-varying magnetic field characterized by microwave frequency. At finite temperatures, even weak thermal fluctuations create perturbations in the magnetization…
Single-qubit gates are essential components of a universal quantum computer. Without selective addressing of individual qubits, scalable implementation of quantum algorithms is not possible. When the qubits are discrete points or regions on…
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…