Related papers: Demonstration of zero optical backscattering from …
We experimentally study the dispersion relation of waves in a two-dimensional (2D) defect layer with periodic nanopores that sits on a three-dimensional (3D) photonic band gap crystal made from silicon by CMOS-compatible methods. The…
We show that submicron Silicon spheres, whose polarizabilities are completely given by their two first Mie coefficients, are an excellent laboratory to test effects of both angle-suppressed and resonant differential scattering cross…
Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…
The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
We report on the first detailed measurements of electron backscattering from low Z targets at energies up to 124 keV. Both energy and angular distributions of the backscattered electrons are measured and compared with electron transport…
We experimentally observe the dipole scattering of a nanoparticle using a high numerical aperture (NA) imaging system. The optically levitated nanoparticle provides an environment free of particle-substrate interaction. We illuminate the…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are…
Using a custom-built scanning system, we generated maps of birefringence on reflection at $\lambda=1064$~nm from single-crystal GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg reflectors (henceforth ``AlGaAs coatings''). Ten coatings were bonded to…
This paper presents the design, simulation, and experimental verification of a flexible thin-film conformal metasurface for backscattering control via orbital angular momentum (OAM) wave generation in the X-band (9.5-10.5 GHz). The…
The phenomenon of negative refraction generally requires negative refractive indices or phase discontinuities, which can be realized using metamaterials or metasurfaces. Recent theories have proposed a novel mechanism for negative…
The thesis 'Investigations to Improve Energy Resolution for Neutron Backscattering Spectrometers Using Ideal Crystals with Low Dynamic Width of the Reflection Curve' first introduces the concept of the neutron backscattering spectrometer…
Dielectric nanoparticles can be engineered to scatter light predominantly in the transverse direction, a phenomenon known as the transverse Kerker effect. Although complete cancelation of forward scattering from a single object is forbidden…
This paper presents and discusses the conditions for zero electromagnetic scattering by electrically small particles. We consider the most general bi-anisotropic particles, characterized by four dyadic polarizabilities and study the case of…
This work reports the successful formation of Ag and Au nanoparticles in $\beta$-Ga$_2$O$_3$ single-crystals by ion implantation and annealing at 550 {\deg}C. X-ray diffraction measurements revealed that nanoparticles were formed after the…
All-dielectric resonant nanophotonics lies at the heart of modern optics and nanotechnology due to the unique possibilities to control scattering of light from high-index dielectric nanoparticles and metasurfaces. One of the important…
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
We report a simple, rapid, and quantitative wide-field technique to measure the optical extinction $\sigma_{\rm ext}$ and scattering $\sigma_{\rm sca}$ cross-section of single nanoparticles using wide-field microscopy enabling simultaneous…