Related papers: A two-atom electron pump
We analyze the rates of noise-induced transitions between period-two attractors. The model investigated is an underdamped oscillator parametrically driven by a field at nearly twice the oscillator eigenfrequency. The activation energy of…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
We report an experimental measurement of Landau-Zener transitions on an individual flux qubit within a multi-qubit superconducting chip designed for adiabatic quantum computation. The method used isolates a single qubit, tunes its tunneling…
A confined system of non-interacting electrons, subject to the combined effect of a time-dependent potential and different external chemical-potentials, is considered. The current flowing through such a system is obtained for arbitrary…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
To analyze the state of injected carrier streams of different electron sources, we propose to use correlation measurements at a quantum point contact with the different sources connected via chiral edge states to the two inputs. In…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…
We consider quantum charge pumping of electrons across a superconducting double barrier structure in the adiabatic limit. The superconducting barriers are assumed to be reflection-less so that an incident electron on the barrier can either…
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with…
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of…
A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit.…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Quantum dots placed along a vibrating nanotube provide a quantum simulation platform that can directly address the electron-phonon interaction. This offers promising prospects for the search of new quantum materials and the study of strong…
Similar to the hybridization of three atoms, three coupled resonators interact to form bonding, anti-bonding and non-bonding modes. The non-bonding mode enables an electromagnetic induced transparency like transfer of energy. Here the…
Electron transfer (ET) between primary electron donors and acceptors is modeled in the photosystem II reaction center (RC). Our model includes (i) two discrete energy levels associated with donor and acceptor, interacting through a…
A simple theory of electromechanical transduction for single-charge-carrier double-layer electroactuators is developed, in which the ion distribution and curvature are mutually coupled. The obtained expressions for the dependence of…
We present a diagrammatic real-time approach to adiabatic pumping of electrons through interacting quantum dots. Performing a systematic perturbation expansion in the tunnel-coupling strength, we compute the charge pumped through a…
We investigate adiabatic charge pumping in disordered system in one dimension with open and closed boundary conditions. In contrast to the Thouless charge pumping, the system has no gap even though all the states are localized, i.e., strong…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…