Related papers: A two-atom electron pump

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…

Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…

In analogy to transistors in classical electronic circuits, a quantum optical switch is an important element of quantum circuits and quantum networks. Operated at the fundamental limit where a single quantum of light or matter controls…

This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the…

We investigate the influence of dissipation on one- and two-qubit rotations in coupled semiconductor quantum dots, using a (pseudo) spin-boson model with adiabatically varying parameters. For weak dissipation, we solve a master equation,…

Unlike radiowave antennas, optical nanoantennas so far cannot be fed by electrical generators. Instead, they are driven by light or via optically active materials in their proximity. Here, we demonstrate direct electrical driving of an…

In this paper we apply an optimal control technique to derive control fields that transfer an electron between ends of a chain of donors or quantum dots. We formulate the transfer as an optimal steering problem, and then derive the dynamics…

Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties…

Electron transmission through nanosystems is blocked if there are no states connecting the left and the right reservoir. Electron-electron scattering can lift this blockade and we show that this feature can be conveniently implemented by…

We investigate transient transport of electrons through a single-quantum-dot controlled by a plunger gate. The dot is embedded in a finite wire that is weakly coupled to leads and strongly coupled to a single cavity photon mode. A…

Adiabatic techniques offer some of the most promising tools to achieve high-fidelity control of the centre-of-mass degree of freedom of single atoms. As their main requirement is to follow an eigenstate of the system, constraints on timing…

We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps,…

We consider the phenomenon of quantum charge pumping of electrons across a superconducting double barrier structure in graphene in the adiabatic limit. In this geometry, quantum charge pumping can be achieved by modulating the amplitudes…

In this paper we investigate the thermoelectric performance of a double-dot device driven by time-dependently modulated gate voltages. We show that if the modulation frequency {\Omega} is sufficiently small, not only quantized charge…

We investigate adiabatic quantum pumping of Dirac fermions on the surface of a strong 3D topological insulator. Two different geometries are studied in detail, a normal metal -- ferromagnetic -- normal metal (NFN) junction and a…

We study adiabatic charge pumping through a quantum dot placed at the junction of $N$ quantum wires. We explicitly map out the pattern of pumped charge as a function of the time-varying tunneling parameters coupling the wires to the dot and…

Generating and detecting a prescribed single-electron state is an important step towards solid-state fermion optics. We propose how to generate an electron in a Gaussian state, using a quantum-dot pump with gigahertz operation and realistic…

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z1*, and a local…

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point…