Related papers: Light-hole quantization in the optical response of…
By monitoring changes in excitonic photoluminescence (PL) that are induced by terahertz (THz) radiation, we observe resonant THz absorption by magnetoexcitons in GaAs/AlGaAs quantum wells. Changes in the PL spectrum are explored as a…
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence…
We study the fluorescence light emitted from GaAs excitons in semiconductor quantum wells. The excitons are modeled as interacting bosons. By combining quantum optical methods for the excitonic emission spectrum with many particle…
We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane…
We report a photoluminescence study of electron-hole complexes in specially designed semiconductor heterostructures. Placing a remote dilute layer of donors at different distances \itshape d \normalfont from the quantum well leads to the…
We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schr\"odinger equation,…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
Exciton excited states in the quantum well are studied via their effect on the nonradiative broadening of the ground exciton resonance. Dependence of the nonradiative broadening of the ground exciton state on the photon energy of additional…
A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed…
We show that when following a simple cavity design metric, a quantum well exciton-microcavity photon coupling constant can be larger than the exciton binding energy in GaAs based optical microcavities. Such a very strong coupling…
We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of…
We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements.…
The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory…
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more…
Theoretical and numerical calculations of the optical absorption spectra of excitons interacting with longitudinal-optical phonons in quasi-2D polar semiconductors are presented. In II-VI semiconductor quantum wells, exciton binding energy…
We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak…
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were…
We study the coherent light-matter interactions of GaAs quantum wells associated with excitons, biexcitons and many-body effects. For most polarization configurations, excitonic features dominate the phase-resolved two-dimensional…
Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in GaAs/AlGaAs coupled quantum wells. Above a critical density and below a critical temperature the photogenerated…