Related papers: Low Resistance GaN/InGaN/GaN Tunnel Junctions
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were…
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and…
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and…
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current)…
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient…
Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both…
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to…
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs…
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into…
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from…