Related papers: Mott p-n Junctions in layered materials
In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…
Density order is usually a consequence of the competition between long-range and short-range interactions. Here we report a density ordered superfluid emergent from a homogeneous Mott insulator due to the competition between frustrations…
We study possible charge instabilities in doped Mott insulators by employing the two-dimensional t-J model with a positive value of the next nearest-neighbor hopping integral t' on a square lattice, which is applicable to electron-doped…
The dynamical mean-field method is used to formulate a computationally tractable theory of electron-phonon interactions in systems with arbitrary local electron-electron interactions in the physically relevant adiabatic limit of phonon…
We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling…
The one-dimensional extended Peierls-Hubbard model is studied at several band fillings using the density matrix renormalization group method. Results show that the ground state evolves from a Mott-Peierls insulator with a correlation gap at…
The interplay between quarter-filled and half-filled umklapp scattering has been examined by applying the renormalization group method to a one-dimensional quarter-filled electron system with dimerization, on-site (U) and nearest-neighbor…
Doping of a Mott insulator gives rise to a wide variety of exotic emergent states, from high-temperature superconductivity to charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major…
We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU(N) Fermi-Hubbard models, using dynamical mean-field theory (DMFT) and the numerical renormalization group (NRG) as impurity solver.…
The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus…
Topological insulators are found in materials that have elements with strong spin orbit interaction. However, electron Coulomb repulsion also potentially generates the topological insulators as well as Chern insulators by the mechanism of…
The widely-used Kohn-Sham implementation of density functional theory (DFT) maps a system of interacting electrons onto an auxiliary non-interacting one and is presumably inaccurate for strongly correlated materials. We present a concrete…
Successive quantum transitions in an intermediate regime are shown to exist between the superfluid and Mott insulating states for interacting bosonic atoms in one dimension with a trapping potential. These transitions, which are caused by…
Twisted WSe$_2$ hosts superconductivity, metal-insulator phase transitions, and field-controllable Fermi-liquid to non-Fermi-liquid transport properties. In this work, we use dynamical mean-field theory to provide a coherent understanding…
Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…
Nonlinear phononics holds the promise for controlling properties of quantum materials on the ultrashort timescale. Using nonequilibrium dynamical mean-field theory, we solve a model for the description of organic solids, where correlated…
We study the optical conductivity of the one-band Hubbard model in the N\'eel state at half filling at T=0 using the dynamical mean-field theory. For small values of the Coulomb parameter clear signatures of a Slater insulator expected from…
We study the t-J-V model of a doped Mott insulator in connection to high-T_c superconductors. The nearest neighbor Coulomb interaction (V) is treated quantum mechanically on equal footing as the antiferromagnetic exchange interaction (J).…
Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a…
Within the framework of the fermion-spin theory, the charge transport in the doped Mott insulators on a honeycomb lattice is studied by taking into account the pseudogap effect. It is shown that the conductivity spectrum in the low-doped…