Band mixing effects in one-dimensional charge transfer insulators
Abstract
The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated -orbitals that are hybridized with surrounding ligand oxygen orbitals to varying degrees. Their physics is thus established by a complex interplay between the transition-metal (TM)-ligand hopping , charge transfer energy , and on-site TM Hubbard repulsion . Here, we study the spectral properties of a one-dimensional (1D) analog of such a system, with alternating TM and ligand anion orbitals situated along a chain. Using the density matrix renormalization group method, we study the model's single-particle spectral function, x-ray absorption spectrum, and dynamical spin structure factor as a function of and . In particular, we present results spanning from the Mott insulating () to negative charge transfer regime to better understand the ground and momentum-resolved excited state properties of these different regimes. Our results can guide new studies on TMOs that seek to situate them within the Mott-Hubbard/charge transfer insulator classification scheme.
Cite
@article{arxiv.2508.01011,
title = {Band mixing effects in one-dimensional charge transfer insulators},
author = {Samuel Milner and Steven Johnston and Adrian Feiguin},
journal= {arXiv preprint arXiv:2508.01011},
year = {2025}
}
Comments
15 pages, 8 figures