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Doped Mott insulator on Penrose tiling

Strongly Correlated Electrons 2022-10-06 v1 Materials Science

Abstract

We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling structure within a real-space dynamical mean-field theory, which can deal with a singular self-energy necessary to describe the Mott insulator and spatial inhomogeneity. We find that the strong correlation effect produces a charge distribution unreachable by a static mean-field approximation. In a small doping region, the spectrum shows a site-dependent gap just above the Fermi energy, which is generated by a singularly large self-energy emergent from the Mott physics and regarded as a real-space counterpart of the momentum-dependent pseudogap observed in a square-lattice Hubbard model.

Keywords

Cite

@article{arxiv.2201.05432,
  title  = {Doped Mott insulator on Penrose tiling},
  author = {Shiro Sakai and Nayuta Takemori},
  journal= {arXiv preprint arXiv:2201.05432},
  year   = {2022}
}

Comments

6 pages, 8 figures

R2 v1 2026-06-24T08:50:05.100Z