Related papers: Hanle effect missing in a prototypical organic spi…
We present an extensive study of a large, room temperature negative magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices in weak magnetic fields. The effect is similar to that previously discovered in polymer…
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance…
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…
We present a novel method to image spin properties of spintronic systems using the spatially confined field of a scanned micromagnetic probe, in conjunction with existing electrical or optical global spin detection schemes. It is thus…
Magnetic field induced transitions in the antiferromagnetic layered manganite La1.4Sr1.6Mn2O7 were studied using magnetization measurements and a high-resolution magneto-optical imaging technique. We report the first direct observation of…
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…
Low power spintronic devices based on the propagation of pure magnonic spin currents in antiferromagnetic insulator materials offer several distinct advantages over ferromagnetic components including higher frequency magnons and a stability…
We measure spin-orbit torque generated by exfoliated layers of the low-symmetry semi-metal ZrTe$_3$ using the spin-torque ferromagnetic resonance (ST-FMR) technique. When the ZrTe$_3$ has a thickness greater than about 10 nm, artifacts due…
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…
The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement…
The magnetoresistance (MR) in the in-plane resistivity is measured in magnetic fields up to 55 T in lightly doped La_{2-x}Sr_{x}CuO_{4} in the N\'eel state (x = 0.01) and in the spin-glass state (x = 0.03) using high-quality untwinned…
We study transport in normal metals in an external magnetic field. This system exhibits an interplay between a transverse spin imbalance (spin Hall effect) caused by the spin-orbit interaction, a Hall effect via the Lorentz force, and spin…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for…
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$-MoTe$_2$, protected from…
We consider the possibility of detecting spin precession in a magnetic field by nonequilibrium transport processes. We find that time reversal symmetry imposes strong constraints on the problem. Suppose the tunneling occurs directly between…
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $\rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later…