Related papers: Current path in light emitting diodes based on nan…
We propose making light emitting diodes out of inverse spin valves. The proposed diodes rely on the spin-dependent electron transport of inverse spin valves that are layered structures of a ferromagnetic half-metal sandwiched between two…
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling…
Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental…
We present a model to describe the spatiotemporal evolution of guided modes in semiconductor nanowires based on a coupled mode formalism. Light-matter interaction is modelled based on semiconductor Bloch equations, including many-particle…
Over the past few decades, thin-film optoelectronic devices have shown significant advancements. Light-emitting diodes (LEDs) based on organic materials, polymers, quantum dots, as well as metal halide perovskites have achieved remarkable…
Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been…
Optical information processing using photonic integrated circuits is a key goal in the field of nanophotonics. Extensive research efforts have led to remarkable progress in integrating active and passive device functionalities within one…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both…
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the…
We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the…
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on…
The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise…