Related papers: Current path in light emitting diodes based on nan…
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
It is widely believed that the generation of high speed optical signals is not the job for an LED. However this work is done to show that there are techniques which can be used to produce nanosecond square pulses from a diode. Rise and fall…
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a…
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant…
Controlling the flow of matter down to micrometer-scale confinement is of central importance in materials and environmental sciences, with direct applications in nano-microfluidics, drug delivery and biothechnology. Currents of…
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a…
Light emitters in a single-mode nanolaser interact with the same cavity field, that gives rise to polarization correlations which transform the cavity mode. Usually these correlations are ignored, however, collective phenomena can lead to…
The electroluminescence of a polythiophene wire suspended between two metallic electrodes is probed using a scanning tunneling microscope. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are…
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes ({\mu}LEDs). Current light-voltage measurements reveal that the external quantum efficiency (EQE) behavior versus charge injection does not…
The new class of hybrid organic-inorganic semiconductor (HOIS) materials, based on halide perovskites, is constantly being pursued for applications such as Light Emitting Diodes (LEDs) and solar cells, due to their momentous optoelectronic…
The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces…
Sub-100 nm polymeric spherical plano-convex nano-lens arrays are fabricated using short electron beam exposures to selectively modify the ultrathin (< 30 nm) polymer films, followed by their intensified self-organized dewetting under an…
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires…
Many classes of non-parity-time (PT) symmetric waveguides with arbitrary gain and loss distributions still possess all-real linear spectrum or exhibit phase transition. In this article, nonlinear light behaviors in these complex waveguides…
We investigate ultra-high frequency electrical properties of nanoscale $n^+$-$i$-$n^+$ diodes made of polar semiconductors. The calculations show that the coupling between optical vibrations of the lattice and the ballistic electrons…
Recently, asymmetric plasmonic nanojunctions [Karnetzky et. al., Nature Comm. 2471, 9 (2018)] have shown promise as on-chip electronic devices to convert femtosecond optical pulses to current bursts, with a bandwidth of multi-terahertz…