Related papers: Indexing Fe-phases in/on GaN using x-ray powder di…
Autocorrelation of electromagnetic fields emitted by high-power microwave sources makes it possible to determine the phase diffusion coefficient $D$. The value of $D$ imposes significant constraints on synchronization of several HPM…
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN…
Kinetics of phase decomposition accompanied by precipitation of sigma-phase in a Fe73.7Cr26.3 alloy isothermally annealed at 832 K was studied by means of M\"ossbauer spectroscopy. Two stage decomposition process has been revealed by three…
We present neutron diffraction analysis of BaFe$_2$(As$_{1-x}$P$_x$)$_2$ over a wide temperature (10 to 300 K) and compositional ($0.11 \leq x \leq 0.79$) range, including the normal state, the magnetically ordered state, and the…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction…
We report the structure and magnetism of PrOFeAs, one of the parent phases of the newly discovered Fe-As superconductors, as measured by neutron powder diffraction. In common with other REOFeAs materials, a tetragonal-orthorhombic phase…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…
We report the decomposition of La2-xSrxCuO4 into La2O3 and Cu nanoparticles in ultra-high vacuum, observed by in-situ heating experiments in a transmission electron microscope (TEM). The analysis of electron diffraction data reveals that…
A detailed analysis of the radiative and Auger de-excitation channels of K-shell vacancy states in Fe II-Fe IX has been carried out. Level energies, wavelengths, A-values, Auger rates and fluorescence yields have been calculated for the…
Neutron diffraction and small angle scattering experiments have been carried out on the double-isotopic polycrystalline sample (7Li0.82Fe0.18OD)FeSe. Profile refinements of the diffraction data establish the composition and reveal an…
Orientation, structure and morphology in the early growth stages of CuO films on strontium titanate were studied by synchrotron radiation X-ray diffraction. Nanostructured CuO films were obtained by ex situ heat treatment at 970 K in oxygen…
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the…
We discovered Fe $K_{\alpha}$ complex emission and pulsation in two highly variable sources (4XMM J174917.7--283329, 4XMM J174954.6--294336). The equivalent widths of 6.4 and 6.7 keV lines of 4XMM J174917.7--283329 are $99^{+84}_{-72}$ and…
Epitaxial thin film fabrication of iron oxides including magnetite Fe3O4 and epsilon-ferrite epsilon-Fe2O3 with the potential for advancing electromagnetic devices has been investigated, which led to the first ever epsilon-ferrite epitaxial…
We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar…
X-ray diffraction experiments were performed on polycrystalline and single-crystal specimens of Ce$_{2}$Fe$_{17}$ at temperatures between 10 K and 300 K. Below $T_{\mathrm{t}}$ = 118$\pm$2 K, additional weak superstructure reflections were…
Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The…
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…