Related papers: Indexing Fe-phases in/on GaN using x-ray powder di…
Rb2SnCu3F12 has been studied using synchrotron powder X-ray diffraction, powder neutron diffraction and single crystal X-ray diffraction at a range of temperatures (100 to 500 K). A broad but clear phase transition, possibly of re-entrant…
Temperature-dependent synchrotron powder diffraction on Cs0.83(Fe0.86Se)2 revealed first order I4/m to I4/mmm structural transformation around 216{\deg}C associated with the disorder of the Fe vacancies. Irreversibility observed during the…
Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta…
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %.…
The continuous need towards improving the capacity of magnetic storage devices requires materials with strong perpendicular magnetic anisotropy. FePd, CoPd and their Co(Fe)Pt counterparts very attractive candidate for such purposes. The…
Concentration of Cr in the Fe-rich alpha-phase, x, resulted from a phase decomposition caused by an isothermal annealing at T = 415 and 450 C of a non-irradiated (NR) Fe-Cr14 EFDA sample and that of a He-ions irradiated (IR) one annealed at…
Pressure-dependent diffraction response of the superconducting phase separated Cs0.72Fe1.57Se2 has been studied using synchrotron radiation up to the pressure of 19 GPa. The main and secondary phases of Cs0.72Fe1.57Se2 have been observed in…
Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in…
We have simultaneously fit Chandra and RXTE spectra of the Galactic black hole XTE J1118+480 with three models for X-ray reflection. We explored a range of accretion disc ionizations (log(xi)=1-4; xi=L_X/nR^{2}) and iron abundances…
In this work we present a study of the structural properties of Fe$_{100-x}$ Ga$_x$ grown by Molecular Beam Epitaxy on Mg0(100). We combine long range and local/chemically selective X-ray probes (X-ray Diffraction and X-ray absorption…
The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically…
Various MSr2YCu2Oz (M1212 with M = Fe, Co, Al and Ga) compounds have been synthesized through a solid state reaction route. All these compounds are derived from the basic CuBa2YCu2O7 structure. Rietveld structural refinement of the…
The nuclear and magnetic structure of Fe1+y(Te1-x,Sex) (0 < x < 0.20) compounds was analyzed between 2 K and 300 K by means of Rietveld refinement of neutron powder diffraction data. Samples with x < 0.075 undergo a tetragonal to monoclinic…
Iron-pnictides Ca(Fe1-xRhx)2As2 (x = 0, 0.035, and 0.19) were studied across the tetragonal-orthorhombic and uncollapsed to collapsed tetragonal phase transitions using Raman spectroscopy. The effect of the phase separation was observed in…
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE)…
Fully relativistic calculations of radiative rates and electron impact excitation cross sections for Fe X are used to derive theoretical emission-line ratios involving transitions in the 174-366 A wavelength range. A comparison of these…
We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar…
The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga…
Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al$_{1-x}$Sc$_x$N) has attracted much attention for its…
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…