Related papers: Impact Ionization and Carrier Multiplication in Gr…
By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
We investigated ultrafast carrier dynamics in graphene with near-infrared transient absorption measurement after intense half-cycle terahertz pulse excitation. The terahertz electric field efficiently drives the carriers, inducing large…
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects…
Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very…
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging…
We study the generation of THz radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a DC electric field. Our model is based on calculating the transient current density from the…
Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…
Graphene as a zero-bandgap semiconductor is an ideal model structure to study the carrier relaxation channels, which are inefficient in conventional semiconductors. In particular, it is of fundamental interest to address the question…
The carrier mobility of a graphene double-layer system is evaluated on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. We focus on the cases in which there is…
Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier…
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously…
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative…
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically…
We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer…
I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a…
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…
We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena…