Related papers: Valley-based FETs in graphene
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…
We investigate the electronic transport in graphene nanoelectromechanical resonators (GrNEMS), known also as graphene nanodrums or nanomembranes. We demonstrate that these devices, despite small values of out-of-plane strain, between $0.1$…
Modifying the hexagonal lattices of graphene enables the repositioning and merging of the Dirac cones which proves to be a key element in the use of these materials for alternative electronic applications such as valleytronics. Here we…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe…
Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics…
Flat bands emerging in buckled monolayer graphene superlattices have been recently shown to realize correlated states analogous to those observed in twisted graphene multilayers. Here, we demonstrate the emergence of valley topology driven…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…
Bilayer graphene hosts valley-chiral one dimensional modes at domain walls between regions of different interlayer potential or stacking order. When such a channel is brought into proximity to a superconductor, the two electrons of a Cooper…
We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap…
Strategically combining four structured domains creates the first ever three-way topological energy-splitter; remarkably, this is only possible using a square, or rectangular, lattice, and not the graphene-like structures more commonly used…
We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
The extremely high pseudo-magnetic field emerging in strained graphene suggests that an oscillating nano-deformation will induce a very high current even without electric bias. In this paper, we demonstrate the sub-terahertz (THz) dynamics…
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it…
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in…
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…
The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum…
Particle-hole symmetry plays an important role for the characterization of topological phases in solid-state systems. It is found, for example, in free-fermion systems at half filling, and it is closely related to the notion of…