Related papers: Valley-based FETs in graphene
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only…
The intertube conductance $G$ of the parallel side contacted armchair nanotubes is calculated by Landauer's formula as a function of the Fermi level $E$. When the intertube difference in the dope strength is large enough, a resonant peak…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents…
The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…
Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses…
In this work we investigate the effects of a Fermi velocity modulation in a valley filter in graphene created by a combination of a magnetic and electric barrier. With the effective Dirac equation of the system, we use the transfer matrix…
In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into…
We argue that by inducing superconductivity in graphene via the proximity effect, it is possible to observes the "quantum valley Hall effect". In the presence of magnetic field, supercurrent causes "valley pseudospin" to accumulate at the…
Graphene corrugations affect hybridization of $\pi$ and $\sigma$ orbitals of carbon atoms in graphene based systems. It can as well break differently the symmetry of the electron transfer integrals for different strip boundaries. Using…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
We present electronic structure and quantum transport calculations that predict conducting channels induced in graphene quantum dots by lines of adsorbed hydrogen atoms to function as highly efficient, experimentally realizable valley…
We show that an $n-n^{-}-n$ junction in 2D semiconductors can flexibly realize two basic valleytronic functions, i.e. valley filter and valley source, with gate controlled switchability between the two. Upon carrier flux passing through the…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…