Related papers: Spin-filter tunnel junction with matched Fermi sur…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
We show that a bilayer graphene flake deposited above a ferromagnetic insulator can behave as a spin-filtering device. The ferromagnetic material induces exchange splitting in the graphene flake, and due to the Fano antiresonances occurring…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
Spin electronics (spintronics) exploits the magnetic nature of the electron, and is commercially exploited in the spin valves of disc-drive read heads. There is currently widespread interest in using industrially relevant semiconductors in…
The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak decreases rapidly below Ef in Ni, but not in…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -- spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering,…
Topological superconductors, such as noncentrosymmetric superconductors with strong spin-orbit coupling, exhibit protected zero-energy surface states, which possess an intricate helical spin structure. We show that this nontrival spin…
The injection of spin currents in semiconductors is one of the big challenges of spintronics. Motivated by the ultrafast demagnetisation and spin injection into metals, we propose an alternative femtosecond route based on the laser…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly…
We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
We report a two-step process for the fabrication of superconductor-insulator-normal metal tunnel junctions using NbN as the superconducting electrode and its surface oxide as the insulating tunnel barrier, and investigate its efficacy in…
We study the effects of spin-splitting and spin-flip scattering in a superconductor (S) on the thermoelectric properties of a tunneling contact to a metallic ferromagnet (F) using the Green's function method. A giant thermopower has been…
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
A scanning tunneling microscope (STM) can probe the inelastic spin excitations of single magnetic atoms in a surface via spin-flip assisted tunneling. A particular and intriguing case is the Mn dimer case. We show here that the existing…