Related papers: Spin-filter tunnel junction with matched Fermi sur…
We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons…
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI)…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have…
Spin mixtures of degenerate fermions are a cornerstone of quantum many-body physics, enabling superfluidity, polarons, and rich spin dynamics through $s$-wave scattering resonances. Combining them with strong, long-range dipolar…
Recent observations of considerable spin polarization in photoemission from metal surfaces through monolayers of chiral molecules were followed by several efforts to rationalize the results as the effect of spin-orbit interaction that…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…
The interfacial coupling of two materials with different ordered phases, such as a superconductor (S) and a ferromagnet (F) is driving new fundamental physics and innovative applications. For example, the creation of spin-filter Josephson…
Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to…
We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
The spin filtering in storage rings is based on the multiple passage of a stored beam through a polarized internal gas target. Apart from the polarization by transmission, a unique geometrical feature of interaction with the target in such…
We consider tunneling from the spin-polarized tip into the Luttinger liquid edge state of quantum spin Hall system. This problem arose in context of the spin and charge fractionalization of an injected electron. Renormalization of the dc…
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by…
Approaching a two-component tip made of a superconductor (S) and a ferromagnet (F) from a magnetic sample allows for two distinct tunneling processes between the ferromagnets, through S: i) Charge and spin are conserved; ii) Charge and spin…
Spin injection across interfaces driven by ultrashort optical pulses on femtosecond timescales constitutes a new way to design spintronics applications. Targeted utilization of this phenomenon requires knowledge of the efficiency of…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that…