Related papers: Bipolar-Driven Large Magnetoresistance in Silicon
In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on…
Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance (MMR) that all generate via the spin Hall effect and inverse spin Hall effect in a nonmagnetic material are always related to each other. However, the influence of…
Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…
The tunneling magnetoresistance (TMR) of a hexagonal array of dipolar coupled anisotropic magnetic nanoparticles is studied using a resistor network model and a realistic micromagnetic configuration obtained by Monte Carlo simulations.…
Hall resistance $R_{\textrm{xy}}$ is commonly suggested to be linear-in-magnetic-field $B$, provided the field is small. We argue here that at low temperatures this linearity is broken due to weak localization/antilocalization phenomena in…
The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of…
The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the…
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density)…
Linear magnetoresistance (LMR) is a widespread phenomenon observed in a host of quantum materials ranging from semiconductor nanostructures to quantum critical and strange metals. While multiple scenarios to explain LMR have been proposed,…
We have investigated the magnetoresistance (MR) and Hall resistivity properties of the single crystals of tantalum sulfide, Ta3S2, which was recently predicted to be a new type II Weyl semimetal. Large MR (up to ~8000% at 2 K and 16 T),…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
Recent measurements of the magnetoresistance (MR) of amorphous superconducting thin films in tilted magnetic fields have displayed several surprising experimental details, in particular a strong dependence of the MR on field angle at low…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
The desire to maximize the sensitivity of read/write heads and thus the information density of magnetic storage devices has produced an intense interest in the magnetoresistance (MR) of magnetic materials. Recent discoveries include…
Longitudinal magnetoresistance (LMR) refers to the change in resistance due to a magnetic field when the current and the magnetic field are parallel to each other. For this to be nonzero in weak magnetic fields, kinetic theory stipulates…
We explore the magnetoresistance (MC) effect in an organic semiconductor device based on the magnetic field related bipolaron formation. By establishing a group of dynamic equations, we present the transition among spin-parallel,…
We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (3D TIs) that is capped by a ferromagnetic insulator (FI). We calculate charge…
We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic…