English

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Strongly Correlated Electrons 2009-11-13 v1 Materials Science
Authors: Rongwei Hu , K. J. Thomas , Y. Lee , T. Vogt , E. S. Choi , V. F. Mitrovic , R. P. Hermann , F. Grandjean , P. C. Canfield , J. W. Kim , A. I. Goldman , C. Petrovic
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Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2_{2}, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

Keywords

colossal magnetoresistance doped semiconductor FeSb2 Kondo semiconductor orbital magnetoresistance quantum interference electrical resistivity

Cite

@article{arxiv.0801.1354,
  title  = {Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor},
  author = {Rongwei Hu and K. J. Thomas and Y. Lee and T. Vogt and E. S. Choi and V. F. Mitrovic and R. P. Hermann and F. Grandjean and P. C. Canfield and J. W. Kim and A. I. Goldman and C. Petrovic},
  journal= {arXiv preprint arXiv:0801.1354},
  year   = {2009}
}

Comments

5 pages, 5 figures

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