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The unique thinness of two-dimensional materials enables control over chemical phenomena at their surfaces by means of various gating techniques. For example, gating methods based on field-effect-transistor configurations have been…

Materials Science · Physics 2021-06-10 Ryo Nouchi , Kei-ichiro Ikeda

In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate…

We investigate the electronic properties of graphene upon water adsorption and study the influence of the SiO2 substrate in this context using density functional calculations. Perfect suspended graphene is rather insensitive to H2O…

Mesoscale and Nanoscale Physics · Physics 2008-11-26 Tim O. Wehling , Mikhail I. Katsnelson , Alexander I. Lichtenstein

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

Materials Science · Physics 2008-09-10 Jian-Hao Chen , Masa Ishigami , Chaun Jang , Daniel R. Hines , Michael S. Fuhrer , Ellen D. Williams

In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the…

Based on first principles calculation, the electronic properties of graphene on metal (Ti, Ca, Ni, Mn, Co, Fe, Cr, K) modified SiO2 substrate have been studied. The results of binding energies supported graphene indicate that the metal…

Mesoscale and Nanoscale Physics · Physics 2012-03-02 L. Shen , F. Jiang , M. Xiao , R. Zhang , M. X. Yu , L. Miao , J. J. Jiang

The electrochemical hydrogenation of graphene induces a robust and reversible conductor-insulator transition, of strong interest in logic-and-memory applications. However, its mechanism remains unknown. Here we show that it proceeds as a…

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…

The Joule heating effect on graphene electronic properties is investigated by using full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations self-consistently. A number of technologically important substrate…

Mesoscale and Nanoscale Physics · Physics 2011-11-01 X. Li , B. D. Kong , J. M. Zavada , K. W. Kim

We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the…

Materials Science · Physics 2008-01-07 C. Casiraghi , A. Hartschuh , E. Lidorikis , H. Qian , H. Harutyunyan , T. Gokus , K. S. Novoselov , A. C. Ferrari

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density…

Materials Science · Physics 2015-05-13 P. A. Khomyakov , G. Giovannetti , P. C. Rusu , G. Brocks , J. van den Brink , P. J. Kelly

Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To…

Materials Science · Physics 2009-11-13 Yingying Wang , Zhenhua Ni , Zexiang Shen , Haomin Wang , Yihong Wu

Graphene is a material of great potential in a broad range of applications, for each of which specific tuning of the materials properties is required. This can be achieved, for example, by covalent functionalization. We have exploited two…

Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Zhe Wang , Dong-Keun Ki , Hua Chen , Helmuth Berger , Allan H. MacDonald , Alberto F. Morpurgo

Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 S. C. Martin , S. Samaddar , B. Sacépé , A. Kimouche , J. Coraux , F. Fuchs , B. Grévin , H. Courtois , C. B. Winkelmann

Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…

Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by…

Materials Science · Physics 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…

Mesoscale and Nanoscale Physics · Physics 2017-05-22 Manisha Chhikara , Iaroslav Gaponenko , Patrycja Paruch , Alexey. B. Kuzmenko

The electronic properties of graphene can be significantly influenced by mechanical strain. One practical approach to induce strain in graphene is to transfer this atomically thin membrane onto pre-patterned substrates with specific…

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Raymond Sachs , Zhisheng Lin , Patrick Odenthal , Roland Kawakami , Jing Shi