Related papers: Interstitial diffusion of ion-implanted boron in c…
Room temperature ionic liquids (ILs) at solid surfaces have been recognized for their significant interfacial properties in electrochemical and electronic devices. To ascertain the interface effects, we investigate dynamical and structural…
The usage of channelling radiation arising from a high energy electron beam traversing a crystal for the production of an intense low emittance muon beam is investigated. The optimal energy and divergence of the electron beam are computed…
The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100…
A polarized, internal electron target gradually polarizes a proton beam in a storage ring. Here, we derive the spin-transfer cross section for $\vec e\,(p,\vec p\, )e$\ scattering. A recent measurement of the polarizing effect of a…
Cooling methods are discussed in reference to the electron-positron, ion and muon beams.
(abridged) The polarized thermal radiation at far infrared and submillimeter wavelengths from dust grains in interstellar clouds with irregular magnetic fields is simulated. We show that the polarization properties of quiescent clouds and…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
Focused ion beam (FIB) techniques are commonly used to machine, analyse and image materials at the micro- and nanoscale. However, FIB modifies the integrity of the sample by creating defects that cause lattice distortions. Methods have been…
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary…
We consider tunnel ionization of an atom or molecule in a strong field within an analytical treatment of the R-matrix method, in which an imaginary boundary is set up inside the classically forbidden region that acts as a source of ionized…
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and…
The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in the silicon that has been studied. Hydrogen diffusion is…
Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode, and photoluminescence. Two positron-trapping interface states are…
The thermodynamics of the lattice model of intercalation of ions in crystals is considered in the mean field approximation. Pseudospin formalism is used for the description of interaction of electrons with ions and the possibility of…
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\,…
The coefficient of diffusion of hydrogen in crystalline silicon is calculated using tight-binding molecular dynamics. Our results are in good quantitative agreement with an earlier study by Panzarini and Colombo [Phys. Rev. Lett. 73, 1636…
Silicate dust grains in the interstellar medium are known to be mostly amorphous, yet crystalline silicate grains have been observed in many long-period comets and in protoplanetary disks. Annealing of amorphous silicate grains into…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
K-shell ionization and characteristic x-ray radiation (CXR) by high-energy electrons and positrons in oriented silicon crystals are studied using computer simulation. A method for this simulation has been developed and is described in…