Related papers: Electron backscattering from stacking faults in Si…
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the…
A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and…
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material.…
Decoherence is an undesirable, but ubiquitous phenomenon in quantum systems. Here, we study the effect of partial decoherence, induced via a B\"uttiker probe, on two-terminal electronic transport across one-dimensional quantum wires and…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
We characterized the energy band dispersion near the Fermi level in single-walled carbon nanotubes using low-temperature scanning tunneling microscopy. Analysis of energy dependent standing wave oscillations, which result from quantum…
We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though…
Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using…
The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…
We examine the effect on the DC resistivity of small-q electron-phonon scattering, in a system with the electronic topology of the high-T_c oxides. Despite the fact that the scattering is dominantly forward, its contribution to the…
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…
Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…
Using the tight-binding model of graphite, incorporating all Slonczewski-Weiss-McClure parameters, we compute the spectrum of two-dimensional states of electrons bound to a stacking fault in Bernal graphite. We find that those bands retain…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
We consider a Dice model with Dirac cones intersected by a topologically flat band at the charge neutrality point and analyze the inelastic scattering of massless pseudospin-1 particles on a circular, gate-defined, oscillating barrier.…
We study the scattering of an electron from a one dimensional inverted Gaussian atomic potential in the presence of strong time periodic electric fields. Using Floquet theory, we construct the Floquet Scattering matrix in the…
A scattering mechanism stemming from the Stark-shift of energy levels by electric fields in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields, and modifies the well known…
We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where…
A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier…