Related papers: Symmetry-dependent phonon renormalization in monol…
Interactions between mesoscopic devices induced by interface acoustic phonons propagating in the plane of a two-dimensional electron system (2DES) are investigated by phonon-spectroscopy. In our experiments ballistic electrons injected from…
We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…
Density functional theory calculations suggest a pronounced hole electron doping asymmetry in a single layer graphene. It turns out that a single graphene sheet can sustain doping levels up to 0.1 holes or up to a remarkably large 1.9…
We present a detailed temperature dependent Raman light scattering study of optical phonons in Ba{1-x}K{x}Fe{2}As{2} (x ~ 0.28, superconducting Tc ~ 29 K), Sr{1-x}K{x}Fe{2}As{2} (x ~ 0.15, Tc ~ 29 K) and non-superconducting BaFe{2}As{2}…
A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous doping. It relies on separating the effects of hydrostatic…
We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF$_3$ gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing the doping…
Motivated by recent experimental observations of Tongay et al. [Tongay et al., Nano Letters, 12(11), 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain.…
Temperature-dependent polarized Raman spectra of electron-doped superconducting Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$ ($x \approx 0.12$) single crystals are reported. All four allowed by symmetry even-parity phonons are identified. Phonon mode of…
We present a comprehensive first-principles analysis of the non-adiabatic effects due to the electron-phonon interaction on the vibrational spectrum of the electron-doped monolayer MoS$_{2}$. Deep changes in the Fermi surface upon doping…
We consider a model Hamiltonian fitted on the ab-initio band structure to describe the electron-phonon coupling between the electronic $\sigma-$bands and the phonon E$_{2g}$ mode in MgB$_2$. The model allows for analytical calculations and…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
We study the model high-temperature superconductor HgBa2CuO4+d with electronic Raman scattering and optical ellipsometry over a wide doping range. The resonant Raman condition which enhances the scattering cross section of "two-magnon"…
The doping dependence of the micro-Raman spectra of high quality La_{2-x}Sr_xCuO_4 microcrystals with x=0.0-0.45 has been investigated in the region 10-300 K. The phonon at ~100 cm^{-1} of the orthorhombic phase shows a classical soft mode…
Using finite temperature Raman spectroscopy, we investigate the electron-phonon interactions (EPI) and phonon-phonon scattering dynamics in the Dirac semimetal Cd3As2 in different fre quency regimes. Strong softening of the Raman shifts…
A Fano-like phonon resonance is observed in few-layer (~3) graphene at room temperature using infrared Fourier transform spectroscopy. This Fano resonance is the manifestation of a strong electron-phonon interaction between the discrete…
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…
The effect of pressure on optical phonon frequencies of MgB$_2$ has been calculated using the frozen-phonon approach based on a pseudopotential method. Gr\"uneisen parameters of the harmonic mode frequencies are reported for the…
We present a Raman scattering study of the E2g phonon anharmonicity and of superconductivity induced self-energy effects in MgB2 single crystals. We show that anharmonic two phonon decay is mainly responsible for the unusually large…