Related papers: Symmetry-dependent phonon renormalization in monol…
We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle \theta. We find a relatively simple dependence of the Raman G peak…
A rate equation formalism is used to determine the effect of electron-phonon coupling on the conductance of a molecule. Interplay between the phonon-induced renormalization of the density of states on the quantum dot and the phonon-induced…
The effects of doping on the spectral properties of low doped systems are investigated by means of Coherent Potential Approximation to describe the distributed disorder induced by the impurities and Phonon-Phonon Non-Crossing Approximation…
Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are…
Polarized Raman scattering measurements have been performed on Na0.5CoO2 single crystal from 8 to 305 K. Both the A1g and E1g phonon modes show a softening below Tc1 ~ 83 K. Additionally, the A1g phonon mode, which is forbidden in the…
Resonant Raman scattering is investigated in monolayer WS$_2$ at low temperature with the aid of an unconventional spectroscopy technique, $i.e.$, Raman scattering excitation (RSE). The RSE spectrum is made up by sweeping the excitation…
Advances in light sources and time resolved spectroscopy have made it possible to excite specific atomic vibrations in solids and to observe the resulting changes in electronic properties but the mechanism by which phonon excitation causes…
We report on electrical Raman measurements in transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external electric field results in downshifts of the D and G modes and in reduction of their intensity.…
Probing phonons, quasi-particle excitations and their coupling has enriched our understanding of these 2D materials and proved to be crucial for developing their potential applications. Here, we report comprehensive temperature, 4-330 K,…
Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…
Superconducting MgB$\_2$ shows an E$\_{2g}$ zone center phonon, as measured by Raman spectroscopy, that is very broad in energy and temperature dependent. The Raman shift and lifetime show large differences with the values elsewhere in the…
Experimentally, Raman continuum for $A_g$ and $B_g$ geometry exhibits peaks far apart from each other (about 80 to 150 $\rm cm^{-1}$) in frequency. The former is insensitive to doping over a small range where $T_c$ does not vary much…
We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong…
Thanks to their highly coherent emission and compact form factor, single axial mode diamond Raman lasers have been identified as a valuable asset for applications including integrated quantum technology, high resolution spectroscopy or…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Ba$_{2}$Ti$_{2}$Fe$_{2}$As$_{4}$O$_{2}$ ($T_c = 21$ K). We observe seven out of eight Raman active modes, with frequencies in good accordance…
Transition metal dichalcogenide monolayers and heterostructures are highly tunable material systems that provide excellent models for physical phenomena at the two-dimensional (2D) limit. While most studies to date have focused on electrons…
Understanding the interaction of charge carriers with lattice vibrations in the quasi-equilibrium regime is crucial for semiconductor functionality. However, the structural signatures of these interactions are often too subtle for…
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…
LiGa$_5$O$_8$ with a cubic spinel type structure was recently reported to be a ultra-wide-band-gap semiconductor with unintentional p-type conduction. While the origin of p-type doping is still unclear, the fundamental properties of this…
Here, we investigate phonon mode- and electron band-selective electron-phonon couplings in centrosymmetric 1T$'$-MoTe$_2$ using time- and angle-resolved photoemission spectroscopy combined with frequency-domain analysis. Femtosecond…