Related papers: Electrostatically Controlled Magnetization Rotatio…
We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the…
Magnetic ferroelectrics or multiferroics, which are currently extensively explored, may provide a good arena to realize a novel magnetoelectric function. Here we demonstrate the genuine electric control of the spiral magnetic structure in…
We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed…
Strain-mediated magnetoelectric (ME) heterostructures enable electric-field control of magnetism and are promising for ultra-low-power spintronic logic. Yet achieving spatially selective, low-voltage control in thin films and quantifying ME…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
The asymmetry of chemical nature at the hetero-structural interface offers an unique opportunity to design desirable electronic structure by controlling charge transfer and orbital hybridization across the interface. However, the control of…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
Topological magnons, quantized spin waves featuring nontrivial boundary modes, present a promising route toward lossless information processing. Realizing practical devices typically requires magnons excited in a controlled manner to enable…
Topological magnetoelectric effect (TME) is a hallmark response of the topological field theory, which provides a paradigm shift in the study of emergent topological phenomena. However, its direct observation is yet to be realized due to…
The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be strongly affected by this interaction. While this can lead to unwanted consequences, such as causing decoherence in qubits…
We investigate spin-orbit torques on magnetization in an insulating ferromagnetic (FM) layer that is brought into a close proximity to a topological insulator (TI). In addition to the well-known field-like spin-orbit torque, we identify an…
Magnetic axis rotation (MAR) in ferromagnetic (FM) layers is crucial for strain-mediated converse magnetoelectric coupling. Employing the density functional theory (DFT), we computationally study the magnetic anisotropy of selected deformed…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Three-dimensional strong topological insulators (TIs) guarantee the existence of a 2-D conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two…
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer…
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an…
Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in…
The influence of uniaxial anisotropy and the dipole interaction on the direction of the magnetization of ultra-thin ferromagnetic films in the ground-state is studied. The ground-state energy can be expressed in terms of anisotropy…
We theoretically study the magnetization dynamics of a thin ferromagnetic film exchange-coupled with a surface of a strong three-dimensional topological insulator. We focus on the role of electronic zero modes imprinted by domain walls…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…