Related papers: Electrostatically Controlled Magnetization Rotatio…
We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe$_2$ moir\'e superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic…
The marked interplay between the crystalline, electronic, and magnetic structure of atomically thin magnets has been regarded as the key feature for designing next-generation magneto-optoelectronic devices. In this respect, a detailed…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
Self-intercalated chromium tellurides Cr1+xTe2 have garnered growing attention due to their high-temperature ferromagnetism, tunable spin structures and air stability, all of which are vital for versatile applications in next-generation…
The conductance of a ferromagnetic particle depends on the relative orientation of the magnetization with respect to the direction of current flow. This phenomenon is known as "anisotropic magnetoresistance". Quantum interference leads to…
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…
The recent discovery of ferromagnetic single-layer CrI3 creates ample opportunities for studying fundamental properties of atomically-thin magnets. By using first-principles calculations and model analysis, we show that a lateral strain…
We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain…
Starting from the Dirac equation, the relativistic quantum hydrodynamic equations for Dirac electrons on a surface of a three dimensional-topological insulator (TI) are derived and numerically solved to study the spin plasmons. The surface…
The field-driven reorientation transition of an anisotropic ferromagnetic monolayer is studied within the context of a finite-temperature Green's function theory. The equilibrium state and the field dependence of the magnon energy gap $E_0$…
The possibility of electron beam guiding is theoretically explored on the surface of a topological insulator through the proximity interaction with a magnetic material. The electronic band modification induced by the exchange coupling at…
Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength…
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal…
We present a novel class of nonlinear dynamical systems - a hybrid of relativistic quantum and classical systems, and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and…
Strong dependence of the Josephson energy on the magnetization orientation in Josephson junctions with ferromagnetic interlayers and spin-orbit coupling opens a way to control magnetization by Josephson current or Josephson phase. Here we…
The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically…
Controlling magnetic anisotropy by orbital magnetic moments related to interfacial strains has considerable potential for the development of future devices using spins and orbitals. For the fundamental physics, the relationship between…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in…