The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferro- and ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effective damping for a FI with 10nm thickness can be tuned by one order of magnitude under the voltage with 0.25V. Also, we provide perspectives on the voltage-induced modulation of the magnon spin transport on proximity-coupled FIs.
@article{arxiv.2106.03332,
title = {Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers},
author = {Takahiro Chiba and Alejandro O. Leon and Takashi Komine},
journal= {arXiv preprint arXiv:2106.03332},
year = {2021}
}
Comments
6 pages, 3 figures. Accepted to Applied Physics Letters