Related papers: Junctionless dual-gate electrostatic modulation of…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring,…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…
Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report…
A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Manipulating the electrostatic double layer and tuning the conductance in nanofluidic systems at salt concentrations of 100 mM or higher has been a persistent challenge. The primary reasons are (i) the short electrostatic proximity length,…
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at…
Among various types of neuromorphic devices towards artificial intelligence, the electrochemical synaptic transistor emerges, in which the channel conductance is modulated by the insertion of ions according to the history of gate voltage…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…