Related papers: Junctionless dual-gate electrostatic modulation of…
Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the…
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a…
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…
Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the…
High-fidelity quantum gates require precise classical control signals, yet the analog hardware delivering these signals introduces nonlinear distortions that degrade gate performance. We demonstrate digital predistortion of an acousto-optic…
Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent…
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson…
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…
Two-dimensional dilute magnetic semiconductors can provide fundamental insights in the very nature of magnetic orders and their manipulation through electron and hole doping. Despite the fundamental physics, due to the large charge density…
In this paper, we present voltage- and current-mode differential magnetless non-reciprocal devices obtained by pairing two single-ended (SE) circulators, each consisting of three first-order bandpass or bandstop LC filters, connected in…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…