Related papers: High resolution SIMS depth profiling of nanolayers
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on…
Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of…
Application of the so called mxing-roughness-information depth (MRI)-model to the quantitative reconstruction of the in-depth distribution of composition is demonstrated by comparing SIMS and AES depth profiles. A GaAs/AlAs reference sample…
Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling…
Atomic force microscopy (AFM) is a well-known tool for studying surface roughness and to collect depth information about features on the top atomic layer of samples. By combining secondary ion mass spectroscopy (SIMS) with focused ion beam…
New developments in quantitative sputter depth profiling during the past ten years are reviewed, with special emphasis on the experimental achievement of ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm). In…
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that…
Microstructural properties of thin-film absorber layers play a vital role in developing high-performance solar cells. Scanning probe microscopy is frequently used for measuring spatially inhomogeneous properties of thin-film solar cells.…
Stacked intelligent metasurfaces (SIMs), which integrate multiple programmable metasurface layers, have recently emerged as a promising technology for advanced wave-domain signal processing. SIMs benefit from flexible spatial…
We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and…
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyping. Although the lateral spread of the ion beam is often…
Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez…
High-spatial-resolution secondary ion mass spectrometry offers a method for mapping lithium at nanoscale lateral resolution. Practical implementation of this technique offers significant potential for revealing the distribution of Li in…
Time-of-Flight (ToF) sensors provide efficient active depth sensing at relatively low power budgets; among such designs, only very sparse measurements from low-resolution sensors are considered to meet the increasingly limited power…
Analysis of bacterial biofilms is particularly challenging and important with diverse applications from systems biology to biotechnology. Among the variety of techniques that have been applied, time-of-flight secondary ion mass spectrometry…
This paper presents a novel iToF-RGB fusion framework designed to address the inherent limitations of indirect Time-of-Flight (iToF) depth sensing, such as low spatial resolution, limited field-of-view (FoV), and structural distortion in…
Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (that has reached 200 mm quite recently). Nitrogen impurities are often used in…
State-of-the-art time-of-flight (ToF) based 3D sensors suffer from poor lateral and depth resolutions. In this work, we introduce a novel sensor concept that provides ToF-based 3D measurements of real world objects with depth precisions up…
The ZnO films, 25 nm thick were deposited by e-beam evaporation of ZnO (99.9%) pellets onto native oxide covered silicon (100) substrates. Details of the interface chemical composition and the chemical depth profile have been deduced as…