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Related papers: Integrated high frequency aluminum nitride optomec…

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Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…

Nanomechanical resonators with exceptionally low dissipation are advancing mechanics-based sensors and quantum technologies. The key for these advances is the engineering of localized phononic modes that are well-isolated from the…

We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $\mu$m buried silicon oxide layer using reactive DC magnetron…

AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…

Materials Science · Physics 2017-06-01 Santanu Parida , P. Magudapathy , A. K. Sivadasan , Ramanathaswamy Pandian , Sandip Dhara

This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…

Systems and Control · Electrical Eng. & Systems 2024-04-24 Walter Gubinelli , Pietro Simeoni , Ryan Tetro , Luca Colombo , Matteo Rinaldi

Aluminum and their alloys, after careful treatments, can develop excellent mechanical, tribological, electrical and chemical (high corrosion resistance) properties. However, 7000 series, with Cu in the alloy, have a poor corrosion…

This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and…

We demonstrate high optical quality factors in aluminum nitride (AlN) photonic crystal nanobeam cavities. Suspended AlN photonic crystal nanobeams are fabricated in sputter-deposited AlN-on-insulator substrates using a self-protecting…

Optics · Physics 2012-06-13 W. H. P. Pernice , C. Xiong , C. Schuck , H. X. Tang

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality…

Optical parametric oscillators (OPOs) have been widely used for decades as tunable, narrow linewidth, and coherent light sources for reaching long wavelengths and are attractive for applications such as quantum random number generation and…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum…

Signal Processing · Electrical Eng. & Systems 2024-05-31 Sinwoo Cho , Omar Barrera , Pietro Simeoni , Ellie Y. Wang , Jack Kramer , Vakhtang Chulukhadze , Joshua Campbell , Matteo Rinaldi , Ruochen Lu

Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile…

We demonstrate a suspended thin-film aluminum nitride (AlN) microbolometer for narrowband very long-wave infrared detection. The device uses a 100-nm-thick AlN membrane suspended above a Pt back reflector by a 1-um air gap. Resonant…

We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium…

We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate in a single transverse mode with $<$3 dB/cm propagation…

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of…

Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…

This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride…

Applied Physics · Physics 2025-08-05 Benedikt Schoof , Moritz Singer , Simon Lang , Harsh Gupta , Daniela Zahn , Johannes Weber , Marc Tornow

Operation of nanomechanical devices in water environment has been challenging due to the strong viscous damping that greatly impedes the mechanical motion. Here we demonstrate an optomechanical micro-wheel resonator integrated in…

Optics · Physics 2015-08-12 King Yan Fong , Menno Poot , Hong X. Tang

We demonstrate integrated photonic circuits for quantum devices using sputtered polycrystalline aluminum nitride (AlN) on insulator. The on-chip AlN waveguide directional couplers, which are one of the most important components in quantum…